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TCAD Sensitivity Analysis for Device Optimization
Symbolic Model Evaluation for TCAD Device Simulation
J. E. Sanchez, G. Bosman, and M. E. Law, “Two-dimensional semiconductor device simulation of trap-assisted generation-recombination noise under periodic large-signal conditions and its use for developing cyclostationary circuit simulation models,” IEEE Transactions on Electron Devices, vol. 50, no. 5, pp. 1353—1362, 2003.
D. O. Martin, F.-C. Hou, J. E. Sanchez, and G. Bosman, “Impedance field noise simulation of Si devices operating under DC and AC steady state conditions,” in Noise and Fluctuations Control in Electronic Devices (A. Balandin, ed.), American Scientific Publishers, 2002.
J. E. Sanchez, G. Bosman, and M. E. Law, “Device simulation of generation-recombination noise under periodic large-signal conditions,” in IEDM Technical Digest, pp. 477—480, 2001.
J. E. Sanchez, G. Bosman, and M. E. Law, “Simulation of generation-recombination noise of resistors and junctions under periodic large-signal steady-state conditions,” in 16th International Conference on Noise in Physical Systems and 1/f Fluctuations, pp. 645—648, 2001.
G. Bosman, F.-C. Hou, J. E. Sanchez, and M. E. Law, “A noise simulation post-processor: A new tool for low noise device design,” in Seventh van der Ziel Symposium on Quantum 1/f Noise and Other Low Frequency Fluctuations in Electronic Devices (P. H. Handel and A. L. Chung, eds.), pp. 169—176, NY: American Institute of Physics, 1998.
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